The EKV Mosfet model is a mathematical model of metal-oxide semiconductor field-effect transistors (MOSFET) which is intended for circuit simulation and analog circuit design.[1] It was developed by Christian C. Enz, François Krummenacher and Eric A. Vittoz (hence the initials EKV) around 1995 based in part on work they had done in the 1980s.[2] Unlike simpler models like the Quadratic Model, the EKV Model is accurate even when the MOSFET is operating in the subthreshold region (e.g. when Vbulk=Vsource then the MOSFET is subthreshold when Vgate-source < VThreshold). In addition, it models many of the specialized effects seen in submicrometre CMOS IC design.

See also

References

  1. ↑ Enz, Christian C.; Krummenacher, François; Vittoz, Eric A. (1995), "An Analytical MOS Transistor Model Valid in All Regions of Operation and Dedicated to Low-Voltage and Low-Current Applications", Analog Integrated Circuits and Signal Processing Journal on Low-Voltage and Low-Power Design (published July 1995), vol. 8, pp. 83–114, doi:10.1007/BF01239381, S2CID 110861430
  2. ↑ Enz, Christian C.; Krummenacher, François; Vittoz, Eric A. (1987), "A CMOS Chopper Amplifier", IEEE Journal of Solid-State Circuits (published June 1987), vol. 22, no. 3, pp. 335–342, Bibcode:1987IJSSC..22..335E, doi:10.1109/JSSC.1987.1052730, S2CID 34431994
  • Web Page of Christian Enz
  • Web Page of François Krummenacher
  • About Eric Vittoz
  • Main Web Page for the EKV Model
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