Fast Cycle DRAM

Fast Cycle DRAM (FCRAM) is a type of synchronous dynamic random-access memory developed by Fujitsu and Toshiba. FCRAM has a shorter data access latency compared to contemporary commodity SDRAMs; and is used in where the lower data access latency is more desirable than low cost and high capacity (FCRAM is a moderate cost and capacity speciality DRAM). FCRAM achieves its low latency by dividing each row into multiple sub-rows, of which only one is activated during a row-activation operation. This had the effect of reducing the effective array size, improving the access time. FCRAM has a DDR SDRAM-like command set to enable memory controllers that support both DDR SDRAM and FCRAM. It also has a standard dual in-line memory module (DIMM).

References

Jacob, Bruce et al. (2008). Memory Systems: Cache, DRAM, Disk. Morgan Kaufmann Publishers. pp. 494–495.

This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.

Dynamic random-access memory (DRAM)
Asynchronous	FPM DRAM EDO DRAM
Synchronous	SDRAM DDR SDRAM DDR2 DDR3 DDR4 DDR5 LPDDR (Mobile DDR) Fast Cycle DRAM (FCRAM) eDRAM RLDRAM HBM HBM2 HBM2E HBM3 HBM-PIM HBM3E Hybrid Memory Cube
Graphics	VRAM WRAM MDRAM SGRAM GDDR GDDR2 GDDR3 GDDR4 GDDR5 GDDR6 GDDR7
Rambus	RDRAM XDR DRAM XDR2 DRAM
Memory modules	SIMM DIMM UniDIMM CAMM
Lists	DRAM timeline SDRAM timeline Bandwidth Transistor count