Antonio H. Castro Neto
Castro Neto in January 2020
Born(1964-08-20)20 August 1964[1]
Paranaguá, Paraná, Brazil
Alma materUniversity of Illinois at Urbana-Champaign[2]
Awards
Websitehttps://graphene.nus.edu.sg/team_member/antonio-castro-neto

Antonio Helio de Castro Neto is a Brazilian-born physicist. He is the founder and director of the Centre for Advanced 2D Materials[5] (previously known as the Graphene Research Centre[6]) at the National University of Singapore. He is a condensed matter theorist known for his work in the theory of metals, magnets, superconductors, graphene and two-dimensional materials. He is a distinguished professor in the Departments of Materials Science Engineering,[7] and Physics[8] and a professor at the Department of Electrical and Computer Engineering.[9] He was elected as a fellow of the American Physical Society in 2003.[10] In 2011 he was elected as a fellow of the American Association for the Advancement of Science.[11]

Education

In 1984, Castro Neto attended the State University of Campinas (UNICAMP). In Campinas, he completed his undergraduate and Master of Science degree in physics under Amir O. Caldeira. In 1991, he moved to the United States where he obtained his PhD degree at the University of Illinois at Urbana-Champaign under the supervision of Eduardo Fradkin.[12][2] His PhD thesis dealt with the understanding and description of the lowest energy excitations of Fermi liquids.[12]

Career

After graduation in 1994, he joined the Institute for Theoretical Physics (currently, Kavli Institute for Theoretical Physics) at the University of California, Santa Barbara.[13] There he studied the electronic properties of nanomaterials and nanostructures under Matthew Fisher. In 1995, he moved to the University of California, Riverside as an assistant professor. In 2000, he moved to Boston University as a professor of physics.

Castro Neto published on theoretical aspects of graphene such as the effect of vacancies in the electronic properties ;[14] the electronic properties of bilayer graphene;[15] superconductivity;[16] twistronics ;[17][18] Coulomb blockade in graphene mesoscopic structures;[19] atomic collapse at charge impurities;[20] localized magnetic states;[21] gap opening in biased bilayers;[22] strain engineering;[23] and impurity induced spin-orbit effect.[24] In 2016, Thomson Reuters recognized Castro Neto as among the top 1% of researchers in physics.[25] He was also recognized by Clarivate Analytics from 2017 to 2019.[26][27][28] His work has been cited more than 101,602 times, and he has an h-index of 122.[29]

In 2008, he moved to the National University of Singapore, starting the Graphene Research Centre (GRC) in 2010[30] with facilities for the synthesis, characterization, and device fabrication of graphene devices.[31] In 2014, the GRC was expanded by a grant of the National Research Foundation of Singapore to explore other 2D materials beyond graphene and their heterostructures[32] with the creation of the Centre for Advanced 2D Materials.[33]

Castro Neto has started 4 companies in Singapore: 2D Materials; MADE Advanced Materials, Graphene Watts and UrbaX.[34]

References

  1. ↑ "Curriculum Vitae" (PDF). bu.edu. Retrieved 28 August 2023.
  2. 1 2 3 "Physics - Antonio H. Castro Neto". physics.aps.org.
  3. ↑ "Prof. Antonio H. Castro Neto is appointed as Distinguished Visiting Chair Professor at SAINT |". 3 September 2012.
  4. ↑ Science, American Association for the Advancement of (30 November 2012). "AAAS News and Notes". Science. 338 (6111): 1166–1171. Bibcode:2012Sci...338.1166.. doi:10.1126/science.338.6111.1166.
  5. ↑ "Antonio Castro Neto |".
  6. ↑ "ABOUT US |".
  7. ↑ "NUS Engineering | Home".
  8. ↑ "Department of Physics". www.physics.nus.edu.sg.
  9. ↑ https://www.eng.nus.edu.sg/ece/staff/castro-neto-antonio-helio/
  10. ↑ "APS Fellowship". www.aps.org.
  11. ↑ "AAAS Fellows" (PDF). aaas.org. Retrieved 28 August 2023.
  12. 1 2 Neto, A. H. Castro; Fradkin, Eduardo (15 April 1994). "Bosonization of Fermi liquids". Physical Review B. 49 (16): 10877–10892. arXiv:cond-mat/9307005. Bibcode:1994PhRvB..4910877C. doi:10.1103/PhysRevB.49.10877. PMID 10009931. S2CID 14320891.
  13. ↑ http://physics.bu.edu/~neto/curr.pdf
  14. ↑ Pereira, Vitor M.; Guinea, F.; Lopes dos Santos, J. M. B.; Peres, N. M. R.; Castro Neto, A. H. (23 January 2006). "Disorder Induced Localized States in Graphene". Physical Review Letters. 96 (3): 036801. arXiv:cond-mat/0508530. Bibcode:2006PhRvL..96c6801P. doi:10.1103/PhysRevLett.96.036801. PMID 16486750. S2CID 123049.
  15. ↑ Nilsson, Johan; Castro Neto, A. H.; Peres, N. M. R.; Guinea, F. (12 June 2006). "Electron-electron interactions and the phase diagram of a graphene bilayer". Physical Review B. 73 (21): 214418. arXiv:cond-mat/0512360. Bibcode:2006PhRvB..73u4418N. doi:10.1103/PhysRevB.73.214418. S2CID 119461714.
  16. ↑ Uchoa, Bruno; Castro Neto, A. H. (3 April 2007). "Superconducting States of Pure and Doped Graphene". Physical Review Letters. 98 (14): 146801. arXiv:cond-mat/0608515. Bibcode:2007PhRvL..98n6801U. doi:10.1103/PhysRevLett.98.146801. PMID 17501299. S2CID 17759190.
  17. ↑ "How Twisted Graphene Became the Big Thing in Physics". Quanta Magazine. 30 April 2019.
  18. ↑ Lopes dos Santos, J. M. B.; Peres, N. M. R.; Castro Neto, A. H. (19 December 2007). "Graphene Bilayer with a Twist: Electronic Structure". Physical Review Letters. 99 (25): 256802. arXiv:0704.2128. Bibcode:2007PhRvL..99y6802L. doi:10.1103/PhysRevLett.99.256802. PMID 18233543. S2CID 46061320.
  19. ↑ Sols, F.; Guinea, F.; Neto, A. H. Castro (16 October 2007). "Coulomb Blockade in Graphene Nanoribbons". Physical Review Letters. 99 (16): 166803. arXiv:0705.3805. Bibcode:2007PhRvL..99p6803S. doi:10.1103/PhysRevLett.99.166803. PMID 17995278. S2CID 16222533.
  20. ↑ Pereira, Vitor M.; Nilsson, Johan; Castro Neto, A. H. (15 October 2007). "Coulomb Impurity Problem in Graphene". Physical Review Letters. 99 (16): 166802. arXiv:0706.2872. Bibcode:2007PhRvL..99p6802P. doi:10.1103/PhysRevLett.99.166802. PMID 17995277. S2CID 15785530.
  21. ↑ Uchoa, Bruno; Kotov, Valeri N.; Peres, N. M. R.; Castro Neto, A. H. (11 July 2008). "Localized Magnetic States in Graphene". Physical Review Letters. 101 (2): 026805. arXiv:0802.1711. Bibcode:2008PhRvL.101b6805U. doi:10.1103/PhysRevLett.101.026805. PMID 18764214. S2CID 14140262.
  22. ↑ Castro, Eduardo V.; Novoselov, K. S.; Morozov, S. V.; Peres, N. M. R.; dos Santos, J. M. B. Lopes; Nilsson, Johan; Guinea, F.; Geim, A. K.; Neto, A. H. Castro (20 November 2007). "Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect". Physical Review Letters. 99 (21): 216802. arXiv:cond-mat/0611342. Bibcode:2007PhRvL..99u6802C. doi:10.1103/PhysRevLett.99.216802. hdl:10261/28539. PMID 18233240. S2CID 28936181.
  23. ↑ Pereira, Vitor; Castro Neto, Antonio (2009). "All-graphene integrated circuits via strain engineering". Phys. Rev. Lett. 103 (4): 046801. arXiv:0810.4539. Bibcode:2008arXiv0810.4539P. doi:10.1103/PhysRevLett.103.046801. PMID 19659379. S2CID 118457746 – via ResearchGate.
  24. ↑ Castro Neto, A. H.; Guinea, F. (10 July 2009). "Impurity-Induced Spin-Orbit Coupling in Graphene". Physical Review Letters. 103 (2): 026804. arXiv:0902.3244. Bibcode:2009PhRvL.103b6804C. doi:10.1103/PhysRevLett.103.026804. PMID 19659232. S2CID 15029721.
  25. ↑ "NUS experts among world's highly-cited". NUS News.
  26. ↑ Hua, Ho Teck. "World's most impactful researchers". NUS News.
  27. ↑ "30 NUS researchers among the world's most highly cited researchers". NUS News.
  28. ↑ "NUS researchers among the world's most influential scientific minds". www.science.nus.edu.sg.
  29. ↑ "Antonio H. Castro Neto". scholar.google.com.br. Retrieved 26 February 2023.
  30. ↑ "National University of Singapore's Graphene Research Centre opens S$15 million graphene fabrication facility". Nanowerk.
  31. ↑ "Solar 'sandwich' could cover a variety of surfaces". Physics World. 13 May 2013.
  32. ↑ "Two-dimensional materials 'as revolutionary as graphene'". phys.org.
  33. ↑ "NTU, NUS push materials science frontiers". The Straits Times. 16 December 2016.
  34. ↑ "National University of Singapore and BASF joint graphene research". Printed Electronics World. 10 February 2014.
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