The ballistic collection transistor is the bipolar transistor exhibiting a ballistic conduction resulting in significant velocity overshoot.[1] Initial demonstration of ballistic conduction in gallium arsenide was done in 1985 by IBM researchers.[2] The amplifier with 40 GHz bandwidth based on heterojunction bipolar transistor gallium arsenide technology implementing ballistic collection transistors was developed in 1994 by Nippon Telegraph and Telephone researchers.[3]

See also

References

  1. ↑ Chang, M F; Ishibashi, T (1996). Current Trends In Heterojunction Bipolar Transistors. World Scientific Publishing Co. Pte. pp. 126–129. ISBN 978-981-02-2097-6.
  2. ↑ Nathan, M. I.; Heiblum, M. (February 1986). "A gallium arsenide ballistic transistor?". IEEE Spectrum. 23 (2): 45–47. doi:10.1109/MSPEC.1986.6371000. S2CID 7718790.
  3. ↑ Ishibashi, T.; Yamauchi, Y.; Sano, E.; Nakajima, H.; Matsuoka, Y. (September 1994). "Ballistic Collection Transistors and Their Applications". International Journal of High Speed Electronics and Systems. 5 (3): 349. doi:10.1142/S0129156494000152.


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