Crossbar, Inc.
TypePrivately held
IndustrySemiconductors: memory
Founded2010
FounderGeorge Minassian, Hagop Nazarian, Wei Lu
Headquarters
Santa Clara, California
ProductsSemiconductor Memory Technology
Number of employees
20+

Crossbar is a company based in Santa Clara, California.[1] Crossbar develops a class of non-volatile resistive random-access memory (RRAM) technology.[2] The company in 2013 announced its goal was a terabyte of storage on a single integrated circuit, compatible with standard CMOS semiconductor manufacturing processes.[3]

History

Crossbar was founded in 2010, by George Minassian, Hagop Nazarian, and Wei Lu.[1][4] As part of the University of Michigan Tech Transfer program, in 2010, Crossbar licensed resistive RAM (RRAM) patents from the University of Michigan.[5] Crossbar filed patents relating to the development, commercialization and manufacturing of RRAM technology.[6]

In August 2013, Crossbar emerged from stealth mode and announced the development of a memory array at a commercial semiconductor device fabrication facility. It was said to deliver faster write performance; lower power consumption and more endurance at half the die size, compared to NAND flash memory. Since it is CMOS-compatible, it can be fabricated without special equipment or materials.[7]

Crossbar received $25 million in funding from Artiman Ventures, Kleiner Perkins Caufield and Byers, Northern Light Venture Capital and the Michigan Investment in New Technology Startups (MINTS) program in 2012.[8] Another funding round of about $35 million was announced in September 2015, with investors from China and Hong Kong.[9]

Crossbar primarily markets to original equipment manufacturers (OEMs) and system on a chip (SOC) developers of consumer, enterprise, mobile, industrial and Internet of things products.[10]


See also

References

  1. 1 2 "From D: Notice of Exempt Offering of Securities". United States Securities and Exchange Commission. November 20, 2012. Retrieved March 31, 2017.
  2. ↑ Clark, Don. "Crossbar Enters Race to Change Memory Chips". blogs.wsj.com The Wall Street Journal. Retrieved 5 August 2013.
  3. ↑ Poeter, Damion. "Startup's 'RRAM' Tech Promises 1TB Memory for Mobile Devices". PCMagazine.com. Retrieved 5 August 2013.
  4. ↑ Shah, Agam. "Startup Crossbar pits RRAM against DRAM and flash storage". CIO.com. Retrieved 5 August 2013.
  5. ↑ Moore, Nicole. "Faster, more powerful mobile devices: U-M startup Crossbar could disrupt the memory market]". ns.umich.edu. Retrieved 5 August 2013.
  6. ↑ Cole, Bernard. "Startup wants to replace NAND and DRAM with silver RRAMs". embedded.com. Retrieved 5 August 2013.
  7. ↑ Harris, Robin. "Flash successor announced". zdnet.com. Retrieved 5 August 2013.
  8. ↑ Tom Simonite (August 14, 2013). "Denser, Faster Memory Challenges Both DRAM and Flash". MIT Technology Review. Retrieved March 31, 2017.
  9. ↑ Chris Mellor (September 18, 2015). "D-round VC ReRAM cash comes crashing down on Crossbar: Close, so close to getting its ReRAM afloat before Intel and Micron barge in". The Register. Retrieved March 31, 2017.
  10. ↑ Takahasi, Dean. "Crossbar says it will kill the $60B flash memory market with Resistive RAM, which stores a terabyte on a chip". venturebeat.com. Retrieved 5 August 2013.
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