Gérald Bastard
Scientific career
ThesisObservation des effets de non-centrosymétrie et des niveaux accepteurs dans Hg Te par l'étude de la magnéto-absorption (1974)

Gérald Bastard (born 3 April 1950 in Paris[1]) is a highly cited[2] French physicist known for his work on semiconductor heterostructures. As of 2011, he is a research director at the Department of Physics of the École Normale Supérieure in Paris.

Education

Bastard completed his Ph.D. in 1974 at Université Paris Diderot, titled Observation des effets de non-centrosymétrie et des niveaux accepteurs dans Hg Te par l'étude de la magnéto-absorption.[3]

Awards

In 2000, Bastard and Emilio E. Mendez won the International Symposium on Compound Semiconductors Quantum Device Award "for pioneering work on electric-field induced optic effects in quantum wells and superlattices (quantum-confined Stark effect and Wannier–Stark localization)".[4]

Books

  • Bastard, Gerald (1991). Wave Mechanics Applied to Semiconductor Heterostructures. Wiley-Interscience. ISBN 978-0-470-21708-5.

References

  1. Bastard, Gerald at ISIHighlyCited.com. Accessed 2011-01-26
  2. "B - Research Analytics - Thomson Reuters". ISI Highly Cited. Retrieved 28 February 2014.
  3. Bastard, Gérald (1974). Observation des effets de non-centrosymétrie et des niveaux accepteurs dans Hg Te par l'étude de la magnéto-absorption (Thesis). OCLC 708311121.
  4. "Awards: phys. stat. sol. (c) 7/10". Physica Status Solidi C. 7 (10): 2353–2357. 2010. Bibcode:2010PSSCR...7.2353.. doi:10.1002/pssc.201090015.


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