Hisayo Sasaki Momose (Japanese: 百瀬 寿代) is a Japanese electrical engineer specializing in semiconductor devices, including MOSFETs[1] and CMOS image sensors.[2] She is a researcher at the Toshiba Center for Semiconductor Research and Development in Kawasaki.[2]

Education and career

Momose is originally from Gifu. She earned a master's degree in chemistry from Ochanomizu University in 1984, and began working for Toshiba in the same year.[1] In 2006 she earned a Ph.D. in electrical engineering from the Tokyo Institute of Technology.[2][3]

Recognition

Momose was named a Fellow of the IEEE in 2005, "for contributions to ultra-thin gate oxide metal oxide semiconductor field effect transistors".[4] She was named a Fellow of the Japan Society of Advanced Physics in 2009, for her "study on high performance Si CMOS devices".[5]

She was one of a group of Toshiba scientists who won the 2007 Yamazaki-Teiichi Prize,[3] and earned a commendation in 2009 from the Minister of Education, Culture, Sports, Science and Technology, for their work on MOSFET devices.[6]

References

  1. 1 2 Verret, Douglas (March 2006), "Changes to the editorial board", IEEE Transactions on Electron Devices, 53 (3): 405, Bibcode:2006ITED...53..405V, doi:10.1109/ted.2006.871512
  2. 1 2 3 "Hisayo Sasaki Momose", IEEE Xplore, IEEE, retrieved 2021-09-03
  3. 1 2 "The 7th (2007) Yamazaki-Teiichi Prize Winner Semiconductor & Semiconductor Device", Prize winners, Foundation for Promotion of Material Science and Technology of Japan, retrieved 2021-09-03
  4. ↑ IEEE Fellows directory, IEEE, retrieved 2021-09-03
  5. ↑ "3rd JSAP Fellow (2009) – 2009 JSAP Fellow Award Recipients", JSAP Fellow, Japan Society of Advanced Physics, retrieved 2021-09-03
  6. ↑ "Awards 2009", Corporate Research & Development Center, Toshiba, retrieved 2021-09-03
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