International Conference on Nitride Semiconductors
AbbreviationICNS
DisciplineMaterials Science Solid State Physics Electronic Engineering
Publication details
PublisherWiley-VCH Physica Status Solidi
History1995–
FrequencyBiennial
The Scottish Exhibition and Conference Centre in Glasgow, venue for ICNS-9

The International Conference on Nitride Semiconductors (ICNS) is a major academic conference and exhibition in the field of group III nitride research. It has been held biennially since 1995. Since the second conference in 1997, hosting of the event has rotated between the Asian, European and North American continents. The ICNS and the International Workshop on Nitride Semiconductors (IWN) are held in alternating years, both covering similar subject areas.

ICNS-9 was held at the Scottish Exhibition and Conference Centre in Glasgow, Scotland, on 10–15 July 2011. Keynote speakers included Professor Umesh Mishra (University of California Santa Barbara and Transphorm) and Professor Hiroshi Amano (Meijo University, Nagoya). ICNS-10 was held in Washington, D.C., United States on 25–30 August 2013, ICNS-11 was held in Beijing, China 30 August–4 September 2015 and ICNS-12 will take place in Strasbourg, France on 24–28 July 2017.

ICNS-13 was held 7-12 July 2019 in Seattle, Washington, United States, was chaired by Alan Doolittle (Georgia Institute of Technology, USA)[1]

Conference list

Conference nameLocationDates
ICNS-13[2] United States Bellevue, Washington, Seattle’s Eastside, United States 7–12 July 2019
ICNS-12[3] France Strasbourg, France 24–28 July 2017
ICNS-11[4]China Beijing, China30 August – 4 September 2015
ICNS-10[5]United States Washington D.C., United States25–30 August 2013
ICNS-9[6]United Kingdom Glasgow, UK10–15 July 2011
ICNS-8[7]South Korea Jeju, Korea18–23 October 2009
ICNS-7[8][9]United States Las Vegas, United States16–21 September 2007
ICNS-6[10]Germany Bremen, Germany28 August – 2 September 2005
ICNS-5[11]Japan Nara, Japan25–30 May 2003
ICNS-4[12]United States Denver, United States16–20 July 2001
ICNS-3[13]France Montpellier, France4–9 July 1999
ICNS-2[14]Japan Tokushima, Japan27–31 October 1997
TWN'95[15]Japan Nagoya, Japan21–23 September 1995

See also

References

  1. ↑ "IWN2016" (PDF).
  2. ↑ mrs.org/icns-13 https://www.mrs.org/icns-13. Retrieved 2019-07-18. {{cite web}}: Missing or empty |title= (help)
  3. ↑ icns-12.coulomb.univ-montp2.fr http://icns-12.coulomb.univ-montp2.fr/. Retrieved 2016-09-29. {{cite web}}: Missing or empty |title= (help)
  4. ↑ G. Zhang, B. Shen, G. Zhang, T. Yu, N. Tang, X. Yang and S. Li (2016), "Preface: Nitride Semiconductors" Physica Status Solidi C 13 (5–6) 177–180 doi:10.1002/pssc.201670126
  5. ↑ J. A. Freitas, C. Wetzel, C. R. Eddy and A. Khan (2014), "Preface: Nitride Semiconductors" Physica Status Solidi C 11 (3–4) 370–372 doi:10.1002/pssc.201470048
  6. ↑ P. J. Parbrook, R. W. Martin and M. P. Halsall (2012) "Preface: Phys. Status Solidi C 3–4/2012" Physica Status Solidi C 9 (3–4) 430–432 doi:10.1002/pssc.201260134
  7. ↑ S.-J. Park (2010) "Preface: Phys. Status Solidi C 7/7-8" Physica Status Solidi C 7 (7-8) 1737–1742 doi:10.1002/pssc.201060095
  8. ↑ "ICNS-7: Home Page".
  9. ↑ S. Nakamura, U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, T. Palacios and D. Jena (2008) "Preface: phys. stat. sol. (c) 5/6" Physica Status Solidi C 5 1472–1474 doi:10.1002/pssc.200860019
  10. ↑ "Events Archive".
  11. ↑ H. Amano and T. Udagawa (2003) "Preface: phys. stat. sol. (c) 0/7" Physica Status Solidi C 0 1977 doi:10.1002/pssc.200390139
  12. ↑ Proceedings of 4th International Conference on Nitride Semiconductors (2002): Part A Physica Status Solidi A 188 (1–2); Part B Physica Status Solidi B 228 (1–2) ISBN 3-527-40347-7
  13. ↑ Article title
  14. ↑ A. Mills (1998) "ICNS-2 charts GaN's progress" III-Vs Review 11 (1) 44–49 doi:10.1016/S0961-1290(97)86971-2
  15. ↑ Topical Workshop on III-V Nitrides
This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.