The selenide iodides are chemical compounds that contain both selenide ions (Se2−) and iodide ions (I−) and one or metal atoms. They are in the class of mixed anion compounds or chalcogenide halides.[1]
Some related compounds do not actually contain a selenide ion, instead containing an iodoselenium cation. These cations include SeI3+, Se2I42+, Se6I22+, and polymeric Se6I+.[2]
List
name | formula | MW | system | space group | unit cell | cell
volume |
density | properties | ref |
---|---|---|---|---|---|---|---|---|---|
Ti4Se9I6 | triclinic | P1 | a = 7.965 b = 10.339 c = 15.692; α = 79.116°, β = 75.861°, γ = 71.437°; Z = 2 | black | [3] | ||||
V4O(Se2)4I6·I2 | 1866.64 | tetragonal | P42/nbc | a=11.8384 c=18.689 Z=4 | 2619.2 | 4.734 | dark blue | [4] | |
CuSe3I | trigonal | R3m | a=9.601 V= 872.859 | [5] | |||||
α | AsSeI | monoclinic | P2s | a=8.855 b=4.194 c=10.341 β=93.74 Z=4 | 5.14 | melt 221 °C dark red metallic | [6] | ||
β | AsSeI | cubic | F4132 | a=11.05 Z=16 | 5.53 | dark red metallic | [6] | ||
AsF6Se6I | [2] | ||||||||
NbSe2I2 | triclinic | P1 | a=6.993 b=7.008 c=7.768 α=89.339° β=66.801° γ=61.284° Z=2 | 299.3 | 5.600 | black; 2D; band gap 1 eV | [7] | ||
triniobium selenide heptaiodide | Nb3SeI7 | hexagonal | P63mc | [1] | |||||
(Nb4Se15I2)I2 | monoclinic | P21/c | a=8.8807 b=25.8368 c=11.6222 β=103.437° | black; 1D; band gap 0.6 eV | [8] | ||||
[Mo3Se7(TeI3)I2]I | 1729.54 | P23/n | a=10.4969 b=13.029 c=16.567 β =102.921° Z=4 | 2208.3 | 5.202 | [1][9] | |||
Pd2SeI3 | orthorhombic | metallic black | [10] | ||||||
heptasilver(I) tetraseleniogermanate(IV) selenide iodide | Ag7GeISe5 | cubic | F43m | a=10.9864 Z=4 | 1326.1 | 6.740 | black; silver ion conductor | [11] | |
CdBiSe2I | monoclinic | C2/m | [1] | ||||||
indium selenide iodide | InSeI | tetragonal | I41/a | [1] | |||||
Antimony selenide iodide | SbSeI | orthorhombic | Pnma | band gap 1.70 eV n-type semiconductor | [1] | ||||
SbF6Se6I | [2] | ||||||||
Cs3Mo6I6Se2I6 | [1] | ||||||||
Cs3Mo6I7SeI6 | [1] | ||||||||
tribarium tetraselenide diiodide | Ba3Se4I2 | monoclinic | C2/c | a = 15.080 Å, b = 10.400 Å, c = 8.383 Å, β = 103.206°, Z = 4 | [12] | ||||
Ta2Se8I | tetragonal | a = 9.59 c = 12.64 | Charge-density-wave Weyl semimetal | [13][14] | |||||
tritantalum selenide heptaiodide | Ta3SeI7 | hexagonal | P63mc | [1] | |||||
Ta4Se9I8 | [1] | ||||||||
WCl6Se6I | [2] | ||||||||
Hg3Se2I2 | orthorhombic | Imma | a= 9.7660 b=19.381 c=9.6332 Z=8 | light red | [1][15] | ||||
trimercury arsenic tetraselenide iodide | Hg3AsSe4I | 1119.43 | hexagonal | P63mc | a = 7.6902 c = 9.968 Z = 2 | 510.50 | 7.283 | dark red | [16] |
Tl6SeI4 | tetragonal | P4/mnc | 7.4 | band-gap 1.6 eV; semiconductor; melt 432 °C | [1][17] | ||||
Bismuth selenide iodide | BiSeI | 414.84 | orthorhombic | Pnma | a = 8.697 b = 4.2205 c = 10.574 | 388.1 | 7.100 | band gap 1.3 eV; silver | [1][18] |
Bi2CuSe3I | [1] | ||||||||
In2Bi3Se7I | [1] | ||||||||
InBi2Se4I | [1] | ||||||||
References
- 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Xiao, Jin-Rong; Yang, Si-Han; Feng, Fang; Xue, Huai-Guo; Guo, Sheng-Ping (September 2017). "A review of the structural chemistry and physical properties of metal chalcogenide halides". Coordination Chemistry Reviews. 347: 23–47. doi:10.1016/j.ccr.2017.06.010.
- 1 2 3 4 Beck, Johannes (1994-02-01). "New Forms and Functions of Tellurium: From Polycations to Metal Halide Tellurides". Angewandte Chemie International Edition in English. 33 (2): 163–172. doi:10.1002/anie.199401631. ISSN 0570-0833.
- ↑ Poltarak, Pavel A.; Komarov, Vladislav Yu.; Kozlova, Svetlana G.; Sukhikh, Aleksandr S.; Artemkina, Sofya B.; Fedorov, Vladimir E. (March 2019). "First titanium square fragment {Ti4(μ4-Se)(μ2-Se2)4} in its selenoiodide: Synthesis and structure of Ti4Se9I6". Inorganica Chimica Acta. 488: 285–291. doi:10.1016/j.ica.2019.01.037. S2CID 104458193.
- ↑ Artemkina, Sofya; Galiev, Ruslan; Poltarak, Pavel; Komarov, Vladislav; Gayfulin, Yakov; Lavrov, Alexander; Fedorov, Vladimir (2021-11-11). "Vanadium O-Centered Selenoiodide Complex: Synthesis and Structure of V 4 O(Se 2 ) 4 I 6 ·I 2". Inorganic Chemistry. 60 (23): 17627–17634. doi:10.1021/acs.inorgchem.1c02213. ISSN 0020-1669. PMID 34761921. S2CID 243988075.
- ↑ Persson, Kristin (2014), Materials Data on CuSe3I (SG:166) by Materials Project, LBNL Materials Project; Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States), doi:10.17188/1203840, retrieved 2020-05-30
- 1 2 Kniep, Rüdiger; Reski, Horst Dieter (February 1981). "Chalcogenide Iodides of Arsenic". Angewandte Chemie International Edition in English. 20 (2): 212–214. doi:10.1002/anie.198102121. ISSN 0570-0833.
- ↑ Qu, Kejian; Zhang, Yue; Peng, Cheng; Riedel, Zachary W.; Won, Juyeon; Zhang, Rong; Woods, Toby J.; Devereaux, Tom; van der Zande, Arend M.; Shoemaker, Daniel P. (2024-01-04). "Exfoliable Transition Metal Chalcogenide Semiconductor NbSe 2 I 2". Inorganic Chemistry. doi:10.1021/acs.inorgchem.3c03493. ISSN 0020-1669.
- ↑ Qu, Kejian; Riedel, Zachary W.; Sánchez-Ramírez, Irián; Bettler, Simon; Oh, Junseok; Waite, Emily N.; Woods, Toby J.; Mason, Nadya; Abbamonte, Peter; de Juan, Fernando; Vergniory, Maia G.; Shoemaker, Daniel P. (2023-02-09). "Quasi-One-Dimensional Transition-Metal Chalcogenide Semiconductor (Nb 4 Se 15 I 2 )I 2". Inorganic Chemistry. 62 (7): 3067–3074. doi:10.1021/acs.inorgchem.2c03796. ISSN 0020-1669. PMID 36758187. S2CID 256738292.
- ↑ Sokolov, Maxim N.; Gushchin, Artem L.; Abramov, Pavel A.; Virovets, Alexander V.; Peresypkina, Eugenia V.; Fedin, Vladimir P. (May 2007). "Synthesis and Structures of Mo 3 Se 7 Te 2 Br 10 , Mo 3 Se 7 TeI 6 , and Mo 6 Te 21 I 22 Containing TeX 3 - (X = Br, I) Ligands Coordinated to a Triangular Cluster Core †". Inorganic Chemistry. 46 (11): 4677–4682. doi:10.1021/ic0700553. ISSN 0020-1669. PMID 17465541.
- ↑ Thiele, Gerhard; Köhler-Degner, Maria; Wittmann, Kurt; Zoubek, Gerd (November 1978). "PdTeI and Pd2SeI3 - The First Chalcogenide Halides of a Platinum Metal". Angewandte Chemie International Edition in English. 17 (11): 852–853. doi:10.1002/anie.197808521. ISSN 0570-0833.
- ↑ Aldon, L.; Belin, R.; Pontillon, Y. (2001-01-01). "Refinement of the crystal structure of heptasilver(I) tetraseleniogermanate(IV) selenide iodide, Ag7GeISe5". Zeitschrift für Kristallographie - New Crystal Structures. 216 (1–4): 191–192. doi:10.1524/ncrs.2001.216.14.191. ISSN 2197-4578. S2CID 98367111.
- ↑ Wang, Jian; Lee, Kathleen; Kovnir, Kirill (2016). "Synthesis, crystal and electronic structure, and optical properties of two new chalcogenide-iodides: Ba3Q4I2 (Q = S, Se)". Inorganic Chemistry Frontiers. 3 (2): 306–312. doi:10.1039/C5QI00225G.
- ↑ Gooth, J.; Bradlyn, B.; Honnali, S.; Schindler, C.; Kumar, N.; Noky, J.; Qi, Y.; Shekhar, C.; Sun, Y.; Wang, Z.; Bernevig, B. A. (November 2019). "Axionic charge-density wave in the Weyl semimetal (TaSe4)2I". Nature. 575 (7782): 315–319. arXiv:1906.04510. Bibcode:2019Natur.575..315G. doi:10.1038/s41586-019-1630-4. ISSN 0028-0836. PMID 31590178. S2CID 184487056.
- ↑ Shi, Wujun; Wieder, Benjamin J.; Meyerheim, H. L.; Sun, Yan; Zhang, Yang; Li, Yiwei; Shen, Lei; Qi, Yanpeng; Yang, Lexian; Jena, Jagannath; Werner, Peter (2021). "A Charge-Density-Wave Weyl Semimetal". Nat. Phys. 17: 381–387. arXiv:1909.04037. doi:10.1038/s41567-020-01104-z. S2CID 230508577.
- ↑ Beck, Johannes; Hedderich, Sylvia (April 2000). "Synthesis and Crystal Structure of Hg3S2I2 and Hg3Se2I2, New Members of the Hg3E2X2 Family". Journal of Solid State Chemistry. 151 (1): 73–76. Bibcode:2000JSSCh.151...73B. doi:10.1006/jssc.1999.8624.
- ↑ Beck, Johannes; Hedderich, Sylvia; Köllisch, Klaus (December 2000). "Hg 3 AsE 4 X (E = S, Se; X = Cl, Br, I), a Family of Isotypic Compounds with an Acentric, Layered Structure". Inorganic Chemistry. 39 (25): 5847–5850. doi:10.1021/ic0003527. ISSN 0020-1669. PMID 11151388.
- ↑ Owens, Alan (2016-04-19). Compound Semiconductor Radiation Detectors. Taylor & Francis. pp. 339–340. ISBN 978-1-4398-7313-7.
- ↑ Braun, Thomas P.; DiSalvo, Francis J. (2000-01-15). "Bismuth selenide iodide". Acta Crystallographica Section C Crystal Structure Communications. 56 (1): e1–e2. Bibcode:2000AcCrC..56E...1B. doi:10.1107/S0108270199016017. ISSN 0108-2701. S2CID 98569164.
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