Suzhou Oriental Semiconductor Co., Ltd (Chinese: 苏州东微半导体有限公司), abbreviated as Oriental Semiconductor (Chinese: 东微半导体), was founded in 2008, located in SIP, Suzhou, China.[1] It invented the world's first semi-floating gate transistor (SFGT) with Fudan University in Shanghai.[2] The related research paper was published on Science on August 9, 2013.[3]

See also

References

  1. ↑ 吴秋华 (2009-07-25). 创意到创业“天使”来搭桥. 苏州日报 (in Chinese). Retrieved 2013-08-13.
  2. ↑ Bob, Yirka (9 August 2013). "Researchers speed up transistors by embedding tunneling field-effect transistor". Phys.org. Retrieved 13 August 2013.
  3. ↑ Wang, P.-F.; Lin, X.; Liu, L.; Sun, Q.-Q.; Zhou, P.; Liu, X.-Y.; Liu, W.; Gong, Y.; Zhang, D. W. (2013). "A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation". Science. 341 (6146): 640–3. Bibcode:2013Sci...341..640W. doi:10.1126/science.1240961. PMID 23929978. S2CID 206550093.
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