International Conference on Defects in Semiconductors
AbbreviationICDS
DisciplineMaterials Science Solid State Physics
Publication details
History1959–
FrequencyBiennial

International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects in Semiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16.[1] The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings.[2]

The current ICDS (the 32nd) is at Rehoboth Beach, Delaware, September 10-15th, 2023.[3] Its proceedings will appear as part of a special topic issue[4] of the Journal of Applied Physics.

ICDS 32 included the inaugural award of the Haller Prize,[5] named after Eugene E. Haller who was a major figure in the semiconductor community and an inspiring mentor for students.[6]

Corbett Prize

The Corbett Prize is awarded at the meetings to a young scientist for an outstanding contribution given at the ICDS. The prize is named in memory of James W. Corbett, one of the pioneers in the field of defects in semiconductors, who was known for helping and encouraging young researchers.[7] The prize has been awarded at every ICDS since 1995.

Recipients

YearLocationAwardee(s)Notes
2023[8]Rehoboth Beach, Delaware, United StatesBrendan McCullianUniversity of Cornell
Fangzhou ZhaoUCSB, Santa Barbara
2021Oslo, NorwayRobert KarsthofPost-Doc at Centre for Materials Science and Nanotechnology Physics, University of Oslo (PhD in 2018)
2019[9]Seattle, United StatesKunal MukherjeeUniversity of California, Santa Barbara, USA
Christian ZimmermannUniversity of Oslo, Norway
2017Matsue, JapanLiwen Sang,[10]Independent scientist at National Institute for Materials Science, Japan (PhD in 2010)
Elena PascalPost-doctoral researcher, Material Science and Engineering, Carnegie Mellon, USA
2015Espoo, FinlandThomas Auzelle,Scientist at Paul Drude Institute in Berlin, Germany (PhD in 2015)
Jan E. StehrAssistant Prof at Linköping University (PhD in 2011)
2013Bologna, ItalyDaniel José da SilvaPost-Doc at KU Leuven (PhD in 2014)
2011Nelson, New ZealandBen GreenResearch scientist at Element Six, UK (PhD in 2013)
2009St Petersburg, RussiaYoshihiro GohdaProfessor at Tokyo Institute of Technology, Japan (PhD in 2003)
Pavel PetrovSenior Scientist at Ioffe Institute, Russia (PhD in 2001)
2007Albuquerque, United StatesFadwa El-MellouhiSenior Scientist at Qatar Energy and Environment Research Institute, Qatar (PhD in 2006)
2005Awaji Island, JapanHannes RaebigerProfessor at Yokohama National University, Japan (PhD in 2006)
Savas BerberProfessor at Gebze Technical University, Turkey (PhD in 2004)
Sukit LimpijumnongProfessor at Suranaree University of Technology, Thailand (PhD in 2000)
2003Aarhus, DenmarkNaoki FukataGroup leader at National Institute for Materials Science, Japan (PhD in 1998)
2001Giessen, GermanyYong-Sung KimPrincipal Researcher at Korea Research Institute of Standards and Science, South Korea (PhD in 2002)
Benjamin HourahineSenior Lecturer at University of Strathclyde (PhD in 2000)
1999California, United StatesAnt UralProfessor at University of Florida (PhD in 2001)
1997Aveiro, PortugalJoanne E. GowerKing's College London
Tomas HallbergLinköping University, Deputy Research Director at Swedish Defence Research Agency (PhD in 1995)
Tomi MattilaHelsinki University of Technology, Senior Scientist at VTT Technical Research Centre of Finland (PhD in 1997)
1995Sendai, JapanYasunori MochizukiVice President for Central Research Laboratories, NEC (PhD in 1987)
Kohei M. ItohProfessor at Keio University, Japan (PhD in 1994)

Haller Prize

Eugene E. Haller was a major figure in the semiconductor community and an inspiring mentor for students.[11] The Haller Prize is given to the best graduate student(s) presentation at each ICDS since 2023.

Recipients

YearLocationAwardee(s)Notes
2023[12]Rehoboth Beach, United StatesSarah ThompsonUniversity of Pennsylvania
Igor ProzheevUniversity of Helsinki

Conference locations

The ICDS venue often rotates between locations in Europe, North America and the far East.

Conference nameLocationDatesProceedings
ICDS 34United Kingdom Glasgow, ScotlandTBC July 2027
ICDS 33China Beijing, China14–19 September 2025
ICDS 32United States Delaware, United States10–15 September 2023J. Appl. Phys.[13]
ICDS 31Norway Oslo, Norway25–30 July 2021J. Appl. Phys.[14]
ICDS 30United States Seattle, United States21–26 July 2019J. Appl. Phys.[15]
ICDS 29Japan Matsue, Japan31 July–4 August 2017J. Appl. Phys.[16]
ICDS 28Finland Espoo, Finland27–31 July 2015J. Appl. Phys[17]
ICDS 27[18]Italy Bologna, Italy21–26 July 2013AIP Conference Proceedings[19]
ICDS 26New Zealand Nelson, New Zealand17–22 July 2011Physica B[20]
ICDS 25Russia St Petersburg, Russia20–24 July 2009Physica B[21]
ICDS 24[22]United States Albuquerque, United States22–37 July 2007Physica B[23]
ICDS 23Japan Awaji Island, Japan24–29 July 2005Physica B[24]
ICDS 22Denmark Århus, Denmark28 July–1 August 2003Physica B[25]
ICDS 21Germany Giessen, Germany16–20 July 2001Physica B[26]
ICDS 20United States Berkeley, California, United States26–30 July 1999Physica B[27]
ICDS 19Portugal Aveiro, Portugal21–25 July 1997Trans Tech[28]
ICDS 18Japan Sendai, Japan23–28 July 1995Trans Tech[29]
ICDS 17Austria Gmunden, Austria18–23 July 1993Trans Tech[30]
ICDS 16United States Bethlehem, Pennsylvania, United States22–26 July 1991Trans Tech[31]
ICDS 15Hungary Budapest, Hungary22–26 August 1988Trans Tech[32]
ICDS 14France Paris, France18–22 August 1986Trans Tech[33]
ICDS 13United States Coronado, California, United States12–17 August 1984Metallurgical Society of AIME[34]
ICDS 12Netherlands Amsterdam, Netherlands12 August–3 September 1982Physica B+C[35]
ICDS 11Japan Oiso, Japan8–11 September 1980Institute of Physics Publishing[36]
ICDS 1United States Gatlinburg, Tennessee, United StatesMay 1959J. Appl. Phys.[37]
  • The Gordon Research Conferences host a regular semiconductor defect meeting[38] in alternating years to the ICDS.
  • The Extended Defects in Semiconductors conference (EDS) is in alternating years to the ICDS.[39]

See also

References

  1. ↑ Jantsch, Wolfgang (October 1993). "Preface". Materials Science Forum. 143–147: 100–105. Bibcode:1998MSF...278..100W. doi:10.4028/www.scientific.net/MSF.278-281.100. S2CID 137674410. Retrieved 22 August 2018.
  2. ↑ Cardona, Manuel; Marx, Werner (15 December 2007). "Anatomy of the ICDS series: A bibliometric analysis". Physica B. 401 (1–2): 1–6. Bibcode:2007PhyB..401....1C. doi:10.1016/j.physb.2007.08.101.
  3. ↑ https://icds2023.org/
  4. ↑ "Defects in Semiconductors 2024".
  5. ↑ "ICDS awards".
  6. ↑ "Eugene E. Haller obituary".
  7. ↑ Gibson, Walter; Ratcliff, Keith; Watkins, George (December 1994). "Obituary. James W. Corbett". Physics Today. 47 (12): 84. Bibcode:1994PhT....47l..83G. doi:10.1063/1.2808764.
  8. ↑ https://icds2023.org/
  9. ↑ "Archived copy". Archived from the original on 23 July 2019. Retrieved 26 July 2019.{{cite web}}: CS1 maint: archived copy as title (link)
  10. ↑ "Dr. Liwen Sang, MANA Independent Scientist Wins the Corbett Prize at ICDS 2017 Conference". International Center for Materials Nanoarchitectonics. Retrieved 22 August 2018.
  11. ↑ "Eugene E. Haller obituary".
  12. ↑ https://icds2023.org/
  13. ↑ "Defects in Semiconductors 2024".
  14. ↑ "Defects in Semiconductors 2022".
  15. ↑ "Defects in Semiconductors 2020".
  16. ↑ Yamamoto, Tetsuya; Fujiwara, Yasufumi; Itoh, Kohei (30 April 2018). "Preface to Special Topic: Defects in Semiconductors". Journal of Applied Physics. 123 (16): 161301. Bibcode:2018JAP...123p1301Y. doi:10.1063/1.5036660.
  17. ↑ Tuomisto, Filip; Makkonen, Ilja (5 May 2016). "Preface to Special Topic: Defects in Semiconductors". Journal of Applied Physics. 119 (18): 181301. Bibcode:2016JAP...119r1301T. doi:10.1063/1.4948578.
  18. ↑ "ICDS 27 - Bologna 21-26 July 2013". www.icds2013.eu. Archived from the original on 7 February 2014. Retrieved 13 January 2022.
  19. ↑ Cavallini, Anna; Estreicher, Stefan (17 February 2015). "Preface: 27th International Conference on Defects in Semiconductors (ICDS-2013)". AIP Conference Proceedings. 1583 (1): 1. Bibcode:2014AIPC.1583....1C. doi:10.1063/1.4865592.
  20. ↑ Evans-Freeman, Jan; Vernon-parry, Karen; Allen, Martin (2012). "Preface". Physica B: Condensed Matter. Elsevier BV. 407 (15): xi. doi:10.1016/s0921-4526(12)00538-8. ISSN 0921-4526.
  21. ↑ Bagraev, Nikolay T.; Emtsev, Vadim V.; Estreicher, Stefan K. (2009). "Preface". Physica B: Condensed Matter. Elsevier BV. 404 (23–24): xix. Bibcode:2009PhyB..404D..19B. doi:10.1016/j.physb.2009.08.098. ISSN 0921-4526.
  22. ↑ "ICDS-24 : International Conference on Defects in Semiconductors, 2007". Archived from the original on 7 December 2008. Retrieved 7 December 2008.
  23. ↑ Estreicher, Stefan K.; Holtz, Mark W.; Seager, Carleton H.; Wright, Alan F. (2007). "Preface and acknowledgements". Physica B: Condensed Matter. Elsevier BV. 401–402: xvii. Bibcode:2007PhyB..401D..17E. doi:10.1016/j.physb.2007.08.100. ISSN 0921-4526.
  24. ↑ Oshiyama, A.; Maeda, K.; Itoh, K.M.; Katayama-Yoshida, H. (1 April 2006). "Proceedings of the 23rd International Conference on Defects in Semiconductors". Physica B. 376–377. doi:10.1016/j.physb.2005.12.003.
  25. ↑ "Preface and acknowledgements". Physica B: Condensed Matter. Elsevier BV. 340–342: vii–viii. 2003. Bibcode:2003PhyB..340D...7.. doi:10.1016/j.physb.2003.10.009. ISSN 0921-4526.
  26. ↑ (ICDS-21) (16 July 2001). "Physica B: Condensed Matter | International Conference on Defects in Semiconductors (ICDS-21)". Science Direct. Elsevier. Retrieved 25 August 2022.{{cite web}}: CS1 maint: numeric names: authors list (link)
  27. ↑ Stavola, Michael (1999). "To 40 years of defects in semiconductors: may the problem never be solved!". Physica B: Condensed Matter. Elsevier BV. 273–274: 1–6. Bibcode:1999PhyB..273....1S. doi:10.1016/s0921-4526(99)00725-5. ISSN 0921-4526.
  28. ↑ Davies, Gordon; Nazaré, Maria Helena, eds. (1997). Defects in Semiconductors 19. Trans Tech. ISBN 9780878497867. Retrieved 26 July 2021.
  29. ↑ Suezawa, M.; Katayama-Yoshida, H., eds. (1995). Defects in Semiconductors 18. Trans Tech. ISBN 9780878497164. Retrieved 26 July 2021.
  30. ↑ Heinrich, Helmut; Jantsch, Wolfgang, eds. (1994). Defects in Semiconductors 17. Trans Tech. ISBN 9780878496716. Retrieved 26 July 2021.
  31. ↑ Davies, Gordon; DeLeo, G. G.; Stavola, M., eds. (1992). Defects in Semiconductors 16. Trans Tech. ISBN 9780878496280. Retrieved 26 July 2021.
  32. ↑ Ferenczi, G., ed. (1989). Defects in Semiconductors 15. Trans Tech. ISBN 9780878495849. Retrieved 26 July 2021.
  33. ↑ von Bardeleben, H. J., ed. (1986). Defects in Semiconductors 14. Trans Tech. ISBN 9780878495511. Retrieved 26 July 2021.
  34. ↑ Kimerling, L. C.; Parsey, J. M., eds. (1985). Thirteenth International Conference on Defects in Semiconductors. Metallurgical Society of AIME. ISBN 9780895204851.
  35. ↑ Kimerling, L. C. (1983). "Defects in semiconductors - 1982". Physica B+C. 116 (1): 1–3. Bibcode:1983PhyBC.116....1K. doi:10.1016/0378-4363(83)90218-8.
  36. ↑ Hasiguti, Ryukiti (1981). Defects and radiation effects in semiconductors, 1980 : invited and contributed papers from the eleventh International Conference on Defects and Radiation Effects in Semiconductors held in Oiso, Japan, 8-11 September 1980. Bristol: Institute of Physics. ISBN 978-0-85498-150-2. OCLC 8123314.
  37. ↑ "Forward". Journal of Applied Physics. 30 (8): 1117. 1959. Bibcode:1959JAP....30.1117.. doi:10.1063/1.1735279.
  38. ↑ "Defects in Semiconductors - Gordon Research Conferences".
  39. ↑ "Eds2018".
This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.